图书介绍

CMOS Digital Integrated Circuits:Analysis and Design (Third Edition)PDF|Epub|txt|kindle电子书版本网盘下载

CMOS Digital Integrated Circuits:Analysis and Design (Third Edition)
  • Sung-Mo Kang Yusuf Leblebici著 著
  • 出版社: 清华大学出版社
  • ISBN:7302090602
  • 出版时间:2004
  • 标注页数:626页
  • 文件大小:34MB
  • 文件页数:643页
  • 主题词:数字集成电路-电路分析-高等学校-教材-英文;数字集成电路-电路设计-高等学校-教材-英文

PDF下载


点此进入-本书在线PDF格式电子书下载【推荐-云解压-方便快捷】直接下载PDF格式图书。移动端-PC端通用
种子下载[BT下载速度快]温馨提示:(请使用BT下载软件FDM进行下载)软件下载地址页直链下载[便捷但速度慢]  [在线试读本书]   [在线获取解压码]

下载说明

CMOS Digital Integrated Circuits:Analysis and Design (Third Edition)PDF格式电子书版下载

下载的文件为RAR压缩包。需要使用解压软件进行解压得到PDF格式图书。

建议使用BT下载工具Free Download Manager进行下载,简称FDM(免费,没有广告,支持多平台)。本站资源全部打包为BT种子。所以需要使用专业的BT下载软件进行下载。如BitComet qBittorrent uTorrent等BT下载工具。迅雷目前由于本站不是热门资源。不推荐使用!后期资源热门了。安装了迅雷也可以迅雷进行下载!

(文件页数 要大于 标注页数,上中下等多册电子书除外)

注意:本站所有压缩包均有解压码: 点击下载压缩包解压工具

图书目录

Chapter1 Introduction1

1.1 Historical Perspective1

1.2 Objective and Organization of the Book5

1.3 A Circuit Design Example8

1.4 Overview of VLSI Design Methodologies18

1.5 VLSI Design Flow21

1.6 Design Hierarchy23

1.7 Concepts of Regularity,Modularity,and Locality25

1.8 VLSI Design Styles28

1.9 Design Quality38

1.10 Packaging Technology41

1.11 Computer-Aided Design Technology43

Exercise Problems45

Chapter2 Fabrication of MOSFETs48

2.1 Introduction48

2.2 Fabrication Process Flow:Basic Steps49

2.3 The CMOS n-Well Process59

2.4 Layout Design Rules66

2.5 Full-Custom Mask Layout Design66

Exercise Problems73

Chapter3 MOS Transistor83

3.1 The Metal Oxide Semiconductor(MOS)Structure83

3.2 The MOS System under Extemal Bias87

3.3 Structure and Operation of MOS Transistor(MOSFET)90

3.4 MOSFET Current-Voltage Characteristics100

3.5 MOSFET Scaling and Small-Geometry Effects112

3.6 MOSFET Capacitances126

Exercise Problems138

Chapter4 Modeling of MOS Transistors Using SPICE143

4.1 Introduction143

4.2 Basic Concepts144

4.3 The LEVEL 1 Model Equations146

4.4 The LEVEL 2 Model Equations150

4.5 The LEVEL 3 Model Equations154

4.6 State-of-the-Art MOSFET Models155

4.7 Capacitance Models156

4.8 Comparison of the SPICE MOSFET Models160

Appendix:Typical SPICE Model Parameters162

Exercise Problems165

Chapter5 MOS Inverters:Static166

Characteristics166

5.1 Introduction166

5.2 Resistive-Load Inverter174

5.3 Inverters with n-Type MOSFET Load183

5.4 CMOS Inverter194

Exercise Problems211

Chapter6 MOS Inverters:Switching Characteristics and Interconnect Effects215

6.1 Introduction215

6.2 Delay-Time Definitions217

6.3 Calculation of Delay Times219

6.4 Inverter Design with Delay Constraints227

6.5 Estimation of Interconnect Parasitics238

6.6 Calculation of Interconnect Delay249

6.7 Switching Power Dissipation of CMOS Inverters257

Appendix:Super Buffer Design264

Exercise Problems267

Chapter7 Combinational MOS Logic Circuits271

7.1 Introduction271

7.2 MOS Logic Circuits with Depletion nMOS Loads272

7.3 CMOS Logic Circuits284

7.4 Complex Logic Circuits291

7.5 CMOS Transmission Gates(Pass Gates)304

Exercise Problems314

Chapter8 Sequential MOS Logic Circuits320

8.1 Introduction320

8.2 Behavior of Bistable Elements321

8.3 SR Latch Circuit327

8.4 Clocked Latch and Flip-Flop Circuits333

8.5 CMOS D-Latch and Edge-Triggered Flip-Flop340

Appendix:Schmitt Trigger Circuit347

Exercise Problems350

Chapter9 Dynamic Logic Circuits354

9.1 Introduction354

9.2 Basic Principles of Pass Transistor Circuits356

9.4 Synchronous Dynamic Circuit Techniques368

9.5 Dynamic CMOS Circuit Techniques373

9.6 High-Performance Dynamic CMOS Circuits377

Exercise Problems394

Chapter10 Semiconductor Memories399

10.1 Introduction399

10.2 Dynamic Random Access Memory(DRAM)404

10.3 Static Random Access Memory(SRAM)432

10.4 Nonvolatile Memory445

10.5 Flash Memory458

10.6 Ferroelectric Random Access Memory(FRAM)466

Exercise Problems469

Chapter11 Low-Power CMOS Logic Circuits475

11.1 Introduction475

11.2 Overview of Power Consumption476

11.3 Low-Power Design Through Voltage Scaling487

11.4 Estimation and Optimization of Switching Activity498

11.5 Reduction of Switched Capacitance504

Exercise Problems506

Chapter12 BiCMOS Logic Circuits507

12.1 Introduction507

12.2 Bipolar Junction Transistor(BJT):Structure and Operation510

12.3 Dynamic Behavior of BJTs522

12.4 Basic BiCMOS Circuits:Static Behavior529

12.5 Switching Delay in BiCMOS Logic Circuits531

12.6 BiCMOS Applications537

Exercise Problems540

Chapter13 Chip Input and Output(I/O)544

Circuits544

13.1 Introduction544

13.2 ESD Protection545

13.3 Input Circuits548

13.4 Output Circuits and L(di/dt)Noise553

13.5 On-Chip Clock Generation and Distribution557

13.6 Latch-Up and Its Prevention562

Exercise Problems569

Chapter14 Design for Manufacturability571

14.1 Introduction571

14.2 Process Variations572

14.3 Basic Concepts and Definitions574

14.4 Design of Experiments and Performance Modeling580

14.5 Parametric Yield Estimation588

14.6 Parametric Yield Maximization593

14.7 Worst-Case Analysis595

14.8 Performance Variability Minimization601

Exercise Problems604

Chapter15 Design for Testability608

15.1 Introduction608

15.2 Fault Types and Models608

15.3 Controllability and Observability612

15.4 Ad Hoc Testable Design Techniques613

15.5 Scan-Based Techniques616

15.6 Built-In Self Test(BIST)Techniques618

Exercise Problems622

References623

热门推荐