占“新”为民 兴“材”报国 王占国院士文集PDF|Epub|txt|kindle电子书版本网盘下载

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第一篇 自传3

幼年时光3

插曲7

初入小学8

远足与讲演10

夜“逃”红军11

崭新的小学生活12

侯集镇的3年初中生活14

夜惊15

雪夜宿房营16

入伙18

紧张有趣的课外活动19

南阳第二高中20

只身北上南开求学23

胆战心惊的高等数学课26

共产主义暑假27

毛主席视察南开大学28

3年困难时期的大学生活29

早期科研工作概述33

什刹海黑夜救同事37

天津小站劳动锻炼38

1978年中国物理学会年会趣事40

变温霍尔系数测量系统建设41

留学瑞典隆德大学固体物理系42

1984年回国后的研究工作45

第二篇 论著选编49

硅的低温电学性质49

Evidence that the gold donor and acceptor in silicon are two levels of the same defect57

Optical properties of iron doped AlxGal-xAs alloys62

Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs73

Direct evidence for random-alloy splitting of Cu levels in GaAs1-xPx89

Acceptor associates and bound excitons in GaAs: Cu95

Localization of excitons to Cu-related defects in GaAs116

Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centers in GaAs128

混晶半导体中深能级的展宽及其有关效应140

Electronic properties of an electron-attractive complex neutral defect in GaAs151

硅中金施主和受主光电性质的系统研究158

A novel model of “new donors” in Czochralski-grown silicon169

Electrical characteristics of GaAs grown from the melt in a reduced-gravity environment177

SI-GaAs单晶热稳定性及其电学补偿机理研究185

Interface roughness scattering in GaAs-AlGaAs modulation-doped heterostructures195

Simulation of lateral confinement in very narrow channels201

Theoretical investigation of the dynamic process of the illumination of GaAs209

Effect of image forces on electrons confined in low-dimensional structures under a magnetic field222

Photoluminescence studies of single submonolayer InAs structures grown on GaAs（001） matrix234

Influence of DX centers in the AlxGa1-xAs barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs/AlGaAs modulation-doped heterostructure240

Photoluminescence studies on very high-density quasi-two-dimensional electron gases in pseudomorphic modulation-doped quantum wells247

Ordering along 〈111〉 and 〈100〉 directions in GaInP demonstrated by photoluminescence under hydrostatic pressure252

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer259

Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions264

808nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice269

Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs275

半导体材料的现状和发展趋势283

Effects of annealing on self-organized InAs quantum islands on GaAs （100）285

Wurtzite GaN epitaxial growth on a Si （001）substrate using γ-Al2 O3 as an intermediate layer291

High-density InAs nanowires realized in situ on（100） InP298

High power continuous-wave operation of self-organized In （Ga） As/GaAs quantum dot lasers304

Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum306

Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices317

High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers322

Research and development of electronic and optoelectronic materials in China328

半导体量子点激光器研究进展339

High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080nm349

Self-assembled quantum dots, wires and quantum-dot lasers355

Controllable growth of semiconductor nanometer structures365

Effect of In0.2 Ga0.8 As and In0.2 Al0.8 As combination layer on band offsets of InAs quantum dots372

信息功能材料的研究现状和发展趋势380

High-performance quantum-dot superluminescent diodes395

Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors400

Materials science in semiconductor processing407

半导体照明将触发照明光源的革命409

Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy415

Broadband external cavity tunable quantum dot lasers with low injection current density422

Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure432

19 μm quantum cascade infrared photodetectors442

High-performance operation of distributed feedback terahertz quantum cascade lasers450

Efficacious engineering on charge extraction for realizing highly efficient perovskite solar cells456

Room temperature continuous wave quantum dot cascade laser emitting at 7.2μm474

第三篇 学术贡献489

忍受辐照伤痛，换来我国空间用硅太阳电池的定型投产489

挑战国际权威，澄清GaAs和硅中深能级物理本质491

“863”十年，掌舵我国新型半导体材料与器件发展494

任“S-863”专家组长，开展新材料领域战略研究498

任咨询组组长，为“973”材料领域发展做出重要贡献499

开拓创新，解决“信息功能材料相关基础问题”501

推动材料基础研究，实施光电信息功能材料重大研究计划503

第四篇 回忆507

半导体材料科学实验室的筹建与初期发展历程回顾507

深情厚谊，历久弥坚509

王占国院士科研事迹回顾511

一段往事514

王占国院士支持南昌大学GaN研究记事515

我生命中的贵人517

贺王占国老师80寿辰519

往事点滴521

在王占国导师身边的日子523

我们的大导师王占国院士526

我眼中的王占国院士528

德高望重，仰之弥高529

超宽禁带半导体材料研究组发展历程531

高山仰止 心念恩师533

师道山高535

人生楷模 学习的榜样537

谆谆教诲 润物无声539

桃李遍天下541

记与王老师交往的二三事544

第五篇 附录549

个人简历549

大事记550

学术交流目录555

获奖目录563

论著目录564

专利目录610

培养学生简况618

后记635